High-Density CMOS Probes are neural interfacing devices that integrate thousands of electrodes onto a single silicon shank using complementary metal-oxide-semiconductor (CMOS) fabrication techniques. These probes can record or stimulate large areas of the brain with high precision and density.
High-Density CMOS Probes address the need for more accurate and detailed neural recordings by increasing the spatial resolution of electrodes, enabling researchers to study complex neural circuits with greater precision. They also improve the reliability and longevity of long-term neural interfacing applications such as brain-machine interfaces (BMIs) and neuroprosthetics.
The probes use CMOS technology to embed amplifiers and digitizers directly at each electrode site, allowing for real-time processing and precise recording/stimulation. The silicon shank provides a stable and biocompatible substrate that can be inserted into the brain tissue without causing significant damage or inflammation.
The manufacturing process involves several steps including wafer preparation, electrode patterning, CMOS circuit integration, probe assembly, packaging, and testing. Each step requires precise control to ensure the integrity of the electrodes and the functionality of the integrated circuits.
The build process starts with a silicon wafer that is patterned with thousands of individual electrode sites using photolithography. The CMOS fabrication process then embeds amplifiers and digitizers at each site, followed by assembly of the probe shank and packaging to protect the sensitive electronics.
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